PART |
Description |
Maker |
CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
CM200DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 200 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM400HU-24F |
Trench Gate Design Single IGBTMOD?/a> 400 Amperes/1200 Volts Trench Gate Design Single IGBTMOD 400 Amperes/1200 Volts Trench Gate Design Single IGBTMOD⑩ 400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor... Powerex Power Semiconductors
|
CM450HA-5F |
Trench Gate Design Single IGBTMOD 450 Amperes/250 Volts Trench Gate Design Single IGBTMOD⑩ 450 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极 24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd. LRC[Leshan Radio Company]
|
XC2S200E-6FG676C XC2S200E-6FG676I XC2S200E-6FGG456 |
Second generation ASIC replacement technology FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA676 100,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA256 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA456 300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 400 MHz, PBGA456 Spartan-IIE FPGA Product Availability
|
XILINX INC Xilinx, Inc.
|
XC4013E-1BG225C XC4010E-2BG225C XC4005E-4PQ100I XC |
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 576 CLBS, 10000 GATES, 166 MHz, PBGA225 10000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 400 CLBS, 7000 GATES, 125 MHz, PBGA225 5000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 100 CLBS, 2000 GATES, 125 MHz, PQFP100 FPGA, 400 CLBS, 7000 GATES, 125 MHz, PQFP208
|
Xilinx, Inc. XILINX INC
|
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|